IndiumV3, Main, Repository, bibRecord, 003D84

Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nm

Identifieur interne : 003D84 ( Main/Repository ); précédent : 003D83; suivant : 003D85

Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nm

Auteurs : RBID : Pascal:10-0430704

Descripteurs français

Pascal (Inist)
- Verrouillage injection, Courant seuil, Résonateur Fabry Pérot, Diode laser, Point quantique, Composé ternaire, Gallium Arséniure, Indium Arséniure, Composé binaire, Elargissement raie, Laser semiconducteur, InAs/InGaAs, InGaAs, InAs, As Ga In, As In, 0130C, 4255P, Equation bilan transfert énergie, Dispositif point quantique, Photonique.

English descriptors

KwdEn :
- Binary compounds, Fabry-Perot resonators, Gallium Arsenides, Indium Arsenides, Injection locking, Laser diodes, Line broadening, Photonics, Quantum dot devices, Quantum dots, Rate equation, Semiconductor lasers, Ternary compounds, Threshold current.

Abstract

This work investigates the linewidth enhancement factor (alpha-factor) and stability of an optically-injected InAs/InGaAs quantum-dot Fabry-Perot laser. Using the injection-locking technique, the above threshold alpha-factor is measured to be as low as 0.6 at 1.3X the threshold current. The below threshold alpha-factor is also measured using the Hakki-Paoli technique. The measured alpha-factor values are used to simulate the dynamic response (stable locking, period-one, period-doubling, or chaos) in the context of single-mode rate equations under zero-detuning injection conditions for external injected power ratios ranging from -11 dB to +1 5dB and slave current bias levels of 1.3X, 2X, and 2.6X threshold. Legacy literature has shown that optically-injected diode lasers typically follow the period-doubling route into a chaotic region as the injection level is increased. Simulations show that at 2X the threshold current, a small region of period-one operation will be observed followed by stable-locking as the injection ratio is increased. This predominantly stable behavior is driven largely by the low alpha-factor. Experimental results support this prediction, where under zero-detuning conditions, only unlocked and stable-locking operation is observed. Experimentally, period-one operation was not observed at a slave laser bias current of 2X threshold, as it was predicted to occur below an external power ratio of -20 dB, a level which was not attainable in this work. Such findings suggest that a quantum-dot device can be employed in an optically-injected configuration for photonic tunable-clock applications.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 003D39

Links to Exploration step

Pascal:10-0430704

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nm</title>
<author><name sortKey="Pochet, M" uniqKey="Pochet M">M. Pochet</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Naderi, N A" uniqKey="Naderi N">N. A. Naderi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Terry, N" uniqKey="Terry N">N. Terry</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>US Air Force Research Laboratory, WPAFB</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Kovanis, V" uniqKey="Kovanis V">V. Kovanis</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>US Air Force Research Laboratory, WPAFB</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Lester, L F" uniqKey="Lester L">L. F. Lester</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM 87106</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0430704</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0430704 INIST</idno>
<idno type="RBID">Pascal:10-0430704</idno>
<idno type="wicri:Area/Main/Corpus">003D39</idno>
<idno type="wicri:Area/Main/Repository">003D84</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0277-786X</idno>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Fabry-Perot resonators</term>
<term>Gallium Arsenides</term>
<term>Indium Arsenides</term>
<term>Injection locking</term>
<term>Laser diodes</term>
<term>Line broadening</term>
<term>Photonics</term>
<term>Quantum dot devices</term>
<term>Quantum dots</term>
<term>Rate equation</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
<term>Threshold current</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Verrouillage injection</term>
<term>Courant seuil</term>
<term>Résonateur Fabry Pérot</term>
<term>Diode laser</term>
<term>Point quantique</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Composé binaire</term>
<term>Elargissement raie</term>
<term>Laser semiconducteur</term>
<term>InAs/InGaAs</term>
<term>InGaAs</term>
<term>InAs</term>
<term>As Ga In</term>
<term>As In</term>
<term>0130C</term>
<term>4255P</term>
<term>Equation bilan transfert énergie</term>
<term>Dispositif point quantique</term>
<term>Photonique</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">This work investigates the linewidth enhancement factor (alpha-factor) and stability of an optically-injected InAs/InGaAs quantum-dot Fabry-Perot laser. Using the injection-locking technique, the above threshold alpha-factor is measured to be as low as 0.6 at 1.3X the threshold current. The below threshold alpha-factor is also measured using the Hakki-Paoli technique. The measured alpha-factor values are used to simulate the dynamic response (stable locking, period-one, period-doubling, or chaos) in the context of single-mode rate equations under zero-detuning injection conditions for external injected power ratios ranging from -11 dB to +1 5dB and slave current bias levels of 1.3X, 2X, and 2.6X threshold. Legacy literature has shown that optically-injected diode lasers typically follow the period-doubling route into a chaotic region as the injection level is increased. Simulations show that at 2X the threshold current, a small region of period-one operation will be observed followed by stable-locking as the injection ratio is increased. This predominantly stable behavior is driven largely by the low alpha-factor. Experimental results support this prediction, where under zero-detuning conditions, only unlocked and stable-locking operation is observed. Experimentally, period-one operation was not observed at a slave laser bias current of 2X threshold, as it was predicted to occur below an external power ratio of -20 dB, a level which was not attainable in this work. Such findings suggest that a quantum-dot device can be employed in an optically-injected configuration for photonic tunable-clock applications.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0>
</fA01>
<fA02 i1="01"><s0>PSISDG</s0>
</fA02>
<fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0>
</fA03>
<fA05><s2>7616</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nm</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers IX : 25-28 January 2010, San Francisco, California, United States</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>POCHET (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>NADERI (N. A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>TERRY (N.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KOVANIS (V.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>LESTER (L. F.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>BELYANIN (Alexey A.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>SMOWTON (Peter M.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>US Air Force Research Laboratory, WPAFB</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>SPIE</s1>
<s3>USA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s2>76160F.1-76160F.12</s2>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA25 i1="01"><s1>SPIE</s1>
<s2>Bellingham, Wash.</s2>
</fA25>
<fA26 i1="01"><s0>978-0-8194-8012-5</s0>
</fA26>
<fA26 i1="02"><s0>0-8194-8012-6</s0>
</fA26>
<fA43 i1="01"><s1>INIST</s1>
<s2>21760</s2>
<s5>354000174684560090</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>24 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>10-0430704</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>This work investigates the linewidth enhancement factor (alpha-factor) and stability of an optically-injected InAs/InGaAs quantum-dot Fabry-Perot laser. Using the injection-locking technique, the above threshold alpha-factor is measured to be as low as 0.6 at 1.3X the threshold current. The below threshold alpha-factor is also measured using the Hakki-Paoli technique. The measured alpha-factor values are used to simulate the dynamic response (stable locking, period-one, period-doubling, or chaos) in the context of single-mode rate equations under zero-detuning injection conditions for external injected power ratios ranging from -11 dB to +1 5dB and slave current bias levels of 1.3X, 2X, and 2.6X threshold. Legacy literature has shown that optically-injected diode lasers typically follow the period-doubling route into a chaotic region as the injection level is increased. Simulations show that at 2X the threshold current, a small region of period-one operation will be observed followed by stable-locking as the injection ratio is increased. This predominantly stable behavior is driven largely by the low alpha-factor. Experimental results support this prediction, where under zero-detuning conditions, only unlocked and stable-locking operation is observed. Experimentally, period-one operation was not observed at a slave laser bias current of 2X threshold, as it was predicted to occur below an external power ratio of -20 dB, a level which was not attainable in this work. Such findings suggest that a quantum-dot device can be employed in an optically-injected configuration for photonic tunable-clock applications.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B00A30C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Verrouillage injection</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Injection locking</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Enganche inyección</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Courant seuil</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Threshold current</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Résonateur Fabry Pérot</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Fabry-Perot resonators</s0>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Diode laser</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Laser diodes</s0>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>47</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>47</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>53</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>53</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Elargissement raie</s0>
<s5>61</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Line broadening</s0>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>62</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>62</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>InAs/InGaAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>77</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>78</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Equation bilan transfert énergie</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Rate equation</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Dispositif point quantique</s0>
<s4>CD</s4>
<s5>97</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Quantum dot devices</s0>
<s4>CD</s4>
<s5>97</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Photonique</s0>
<s4>CD</s4>
<s5>98</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Photonics</s0>
<s4>CD</s4>
<s5>98</s5>
</fC03>
<fN21><s1>284</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers</s1>
<s2>09</s2>
<s3>San Francisco CA USA</s3>
<s4>2010</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 003D84 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 003D84 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:10-0430704
   |texte=   Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nm
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nm

Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nm

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri